A hole diffuses from the p-side to the n-side in a p-n junction. This means that

A PN junction diode cannot be used

A solid which is transparent to visible light and whose conductivity increases with temperature is formed by

Diffusion current in a p-n junction is greater than the drift current in magnitude

The depletion layer in the p-n junction region is caused by

In a n-p-n transistor circuit, the collector current is 9 mA. If 90% of the electrons emitted reach the collector, then the emitter current is

Application of a forward bias to a p-n junction

Zener diode is used for

The difference in t he variation of resistance with temperature in a metal and a semi conductor arises essentially due to the  difference in.

In the middle of the depletion layer of a reverse biased p-n junction the

When p-n junction diode is forward biased then

When n-p-n transistor is used as an amplifier then

When a p-n diode is reverse biased, then :

The minimum potential difference between the

base and emitter required to switch a silicon

transistor ‘ON’ is approximately:

The potential in the depletion layer is due to

The cut off voltage for silicon diode is approximately

The width of forbidden gap in silicon crystal is 1.1 eV. When the crystal is converted into a n-type semiconductor the distance of Fermi level from conduction band is

The electrical conductivity of a semiconductor increases when e-m radiation of wavelength shorter than 2480 nm is incident on it. The band gap (in eV) for the semiconductor is

In a p-n-p transistor, circuit, the collector current is 10 mA. If 90% of holes emitted reach the collector.